کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117285 | 1461359 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth, characterization and photoconduction properties of Sb0.1Mo0.9Se2 single crystals grown by DVT technique
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The present investigation deals with the preparation of antimony doped molybdenum di-selenide (Sb0.1Mo0.9Se2) single crystals and its application for detection of UV-Visible radiation. The chemical composition of the crystals grown by direct vapor transport (DVT) technique is confirmed by Energy Dispersive Analysis of X-rays (EDAX), while the morphological analysis is carried out using optical microscopy and Scanning Electron Microscopy. The grown crystals are characterized by powder X-ray diffraction technique to evaluate the structural properties of the material and are compared with that of the pure MoSe2 crystals grown under similar conditions. The XRD analysis revealed the hexagonal structure of the crystals. The indirect optical band gap of 1.39â¯eV, Urbach energy and steepness parameter were determined by UV-Visible spectroscopy. The ability of pure and Sb doped MoSe2 crystals to be used as detectors of UV, Visible and IR radiations are studied by their pulsed photoresponse on exposure to a polychromatic source at varying intensities of illumination. Laser source (670â¯nm) having an intensity of 3â¯mWâ¯cmâ2, UV radiation (320â¯nm) having an intensity of 20â¯mWâ¯cmâ2 and IR radiation having an intensity of 120â¯mWâ¯cmâ2 were used in the measurements. The effect of biasing voltage on the photoresponse has also been analyzed. The excellent detection properties of the grown crystals are revealed from the responsivity, specific detectivity and external quantum efficiency (EQE) of pure and Sb doped MoSe2 crystals. The effect of doping is clearly seen in the improvement of the detection properties of the crystals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 88, December 2018, Pages 1-9
Journal: Materials Science in Semiconductor Processing - Volume 88, December 2018, Pages 1-9
نویسندگان
Vijay Dixit, Salil Nair, Jolly Joy, C.U. Vyas, G.K. Solanki, K.D. Patel, V.M. Pathak,