کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117338 | 1461359 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of photosensitive polyimides (PSPIs) and their feasible evaluation for lithographic insulation patterns (LIPs) of integrated circuits (ICs) without negative photoresists
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
A photosensitive polyimide (PSPI) with high glass transition temperature (Tg; 259â¯â), good inherent viscosity (I.V.; 0.31â¯dL/g), and superb decomposition temperature (Td; 368â¯â) has been manufactured by the appropriate prescription of diamine monomer (i.e. 2,2-bis (3-amino-4- hydroxyphenyl)-hexafluoropropane; APAF), dianhydride monomer (i.e. 4,4â²-(4,4â²- isopropylidenediphenoxy)bis(phthalic anhydride); BPADA), cyclodehydating agent (i.e. p-xylene), base (i.e. N,N,N-triethylamine; TEA), and photosensitive monomer (i.e. acryloyl chloride; AOC). In order to explore the applying feasibility, we have prepared lithographic insulation pattern resin (LIPR) of integrated circuit (IC) with PSPI (i.e. APAF/BPADA/AOC polyimide), solvent (i.e. N-methyl-2-pyrrolidone; NMP), photoinitiator (i.e. I-305), crosslinking agent (i.e. CLA-1), co-photoinitiator (i.e. I-309) as well as coupling agent (i.e. vinyltrimethoxysilane; VTES) and utilized it without negative photoreist by silicon wafer, i-line (wavelength: 365â¯nm; optical density: 1200â¯mW/cm2), and photomask. Experimental results reveal that lab-made LIPR of IC based on PSPI is a promising IC package material with high tensile strength of 106â¯MPa, excellent adhesion on silicon wafer (i.e. eligible of cross-cut examination), great coefficient of thermal expansion (CTE) of 17.9â¯ppm/â, low dielectric constant (Dk) of 3.5, high surface electric resistance of 8.3â¯Ãâ¯1011 Ω/sq., low dielectric loss (Df) of 0.01, moderate hygroscopicity of 2.9% (23â¯â, 24â¯h), and low residual stress of 32.0â¯MPa.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 88, December 2018, Pages 132-138
Journal: Materials Science in Semiconductor Processing - Volume 88, December 2018, Pages 132-138
نویسندگان
Meng-Hsin Chen, Chiu-Chun Lai, Hsin-Lung Chen, Yi-Hung Lin, Kuan-Yeh Huang, Chih-Hsiang Lin, Ho-Ting Hsiao, Lung-Chang Liu, Chien-Ming Chen,