کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117387 | 1461360 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lattice contraction due to boron doping in silicon
ترجمه فارسی عنوان
انقباض لبه به علت دوپینگ بور در سیلیکن
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
چکیده انگلیسی
In modern electronic devices, strain is used to increase carrier mobility. It is thus mandatory to know precisely the effect of doping on the lattice parameter of silicon. However, there are many experimental biases which prevent one from measuring this effect with high accuracy. For this reason, we have designed and fabricated a step-like structure consisting of five 50â¯nm-thick Si layers of increasing substitutional boron concentrations. Then, we have used Dark Field Electron Holography, a Transmission Electron Microscopy based technique, to measure the strain in these pseudomorphic and defect-free layers. Using Finite Element Modelling, we show that the observed out-of-plane strains can be reproduced by assuming that the expansion coefficient of boron is about ââ¯6.5â¯Ãâ¯10-24 cm3. This value is slightly larger (in absolute value) than those previously reported. It is otherwise about 20% larger than predicted from the size mismatch between B and Si atoms.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 87, 15 November 2018, Pages 65-68
Journal: Materials Science in Semiconductor Processing - Volume 87, 15 November 2018, Pages 65-68
نویسندگان
Victor Boureau, Jean Michel Hartmann, Alain Claverie,