کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117531 | 1461363 | 2018 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of post-annealing on the properties of Co-doped ZnO thin films deposited by channel-spark ablation
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of post-annealing on the properties of Co-doped ZnO thin films deposited by channel-spark ablation Effect of post-annealing on the properties of Co-doped ZnO thin films deposited by channel-spark ablation](/preview/png/7117531.png)
چکیده انگلیسی
In this study, we report on the effect of post-annealing treatment on the structure and morphology of Co-doped ZnO (CZO) thin film nano-composites deposited on Si (100) by channel-spark pulsed electron beam ablation (PEBA) from a single target, CoxZn1-xO (xâ¯=â¯0.20). The as-grown CZO films have been deposited within the temperature range 350â¯Â°C-450â¯Â°C, at electron beam acceleration voltages of 15â¯kV and 16â¯kV, and a beam frequency of 4â¯Hz. The films have been subjected to thermal annealing at either 400â¯Â°C or 600â¯Â°C for one hour. The effect of post-growth annealing on film properties has been discussed in terms of surface morphology, chemical composition, chemical state, and crystal structure. Experimental results show that, overall, post-annealing treatment significantly affects the structural and morphological properties of the films. Films annealed at 400â¯Â°C have higher average particle size and degree of crystallinity of ZnO hexagonal wurtzite structure relatively to the films annealed at 600â¯Â°C. Films annealed at 400â¯Â°C exhibit larger content in hexagonal close-packed (hcp) metallic Co (Co°) compared to the films annealed at 600â¯Â°C and to as-grown films. Both x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) indicate that enhanced growth of Coо is achieved at the annealing temperature of 400°â¯C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 84, September 2018, Pages 24-35
Journal: Materials Science in Semiconductor Processing - Volume 84, September 2018, Pages 24-35
نویسندگان
Asghar Ali, Redhouane Henda,