کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117569 | 1461363 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impurity band conduction in Mn-doped p type InAs single crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Impurity band conduction in Mn-doped p type InAs single crystal Impurity band conduction in Mn-doped p type InAs single crystal](/preview/png/7117569.png)
چکیده انگلیسی
The electrical transport properties of Mn doped InAs single crystal (InAs:Mn) were determined from temperature-dependent Hall effect measurements over the temperature range of 77-300â¯K. Both samples were found to be p-type attributed to Mn acceptors randomly substituting for indium lattice sites. The sample with relatively higher doping concentration exhibits characteristics with nearest-neighbor hopping conductance (NNH) in impurity band below 200â¯K. The ionization energy of the Mn acceptor in InAs is determined to be 27â¯meV from the analysis of PL spectrum of the lightly doped sample. It is determined from the value of ionization energy that the localized radius a0 of the manganese acceptor is 17âÃ
.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 84, September 2018, Pages 115-118
Journal: Materials Science in Semiconductor Processing - Volume 84, September 2018, Pages 115-118
نویسندگان
Guiying Shen, Youwen Zhao, Yongbiao Bai, Ding Yu, Jingming Liu, Hui Xie, Zhiyuan Dong, Jun Yang, Fengyun Yang, Fenghua Wang,