کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117584 | 1461363 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Large-grained Sb2S3 thin films with Sn-doping by chemical bath deposition for planar heterojunction solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Herein, the growth of large-grained and compact Sb2S3 thin films with good electrical properties by Sn doping using a chemical bath deposition (CBD) and annealing approach is detailed. Sn-doped Sb2S3 thin films were prepared using the CBD method with SbCl3, SnCl2.2H2O, and Na2S2O3 as source materials, and ethylenediamine tetraacetic acid (EDTA) as the complexing agent at 40 ° C for 3âh followed by annealing at 250â°C for 30âmin under Ar ambience. Un-doped Sb2S3 films exhibited an orthorhombic crystal structure with lattice parameters of a=â1.142ânm, b=â0.381ânm, and c=â1.124ânm, crystalline grain sizes of 100ânm, a direct optical band gap of 1.70âeV, p-type electrical conductivity with high electrical resistivity, and low hole mobility. With Sn doping, a significant increase in the grain size of the films from 6 to >10μm was observed with increasing Sn content from 1.0 to 5.5âat% followed by a decrease in the grain size. The direct optical band gap of the films was 1.71-1.72âeV. By varying Sn at%, the electrical resistivity of the films decreased, and hole mobility increased from 117 to 205âcm2 Vâ1 sâ1 up to 5.5âat% and decreased to 166âcm2 Vâ1 sâ1 at 7.2âat%. With the addition of 1.0-5.5âat% Sn in the Sb2S3 films, the grain growth and electrical properties of the films were drastically enhanced, which is beneficial for the fabrication of planar heterojunction solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 84, September 2018, Pages 138-143
Journal: Materials Science in Semiconductor Processing - Volume 84, September 2018, Pages 138-143
نویسندگان
U. Chalapathi, B. Poornaprakash, Chang-Hoi Ahn, Si-Hyun Park,