کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117601 | 1461364 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of sputtered CdSe thin films as the window layer for CdTe solar cells
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CdSe film is noteworthy for its application in CdTe solar cells. In this paper, the crystal structure, surface profile and optical properties of CdSe films deposited at 25â¯Â°C, 200â¯Â°C, 250â¯Â°C, 300â¯Â°C and 350â¯Â°C by magnetron sputtering are investigated by XRD, SEM, AFM and an UV-VIS spectrometer. XRD patterns show that CdSe films deposited at 200â¯Â°C and 250â¯Â°C have cubic structure, which hasn't been reported so far for sputtered CdSe films. CdSe films deposited at 300â¯Â°C and 350â¯Â°C are hexagonal. Then CdSe films with different substrate temperatures (25â¯Â°C, 200â¯Â°C, 250â¯Â°C and 300â¯Â°C) were used as the window layer for CdTe solar cells. CdSe/CdTe device with CdSe film deposited at 250â¯Â°C reaches the highest efficiency. Quantum efficiency (QE) was enhanced in the range of 300-510â¯nm and 830-900â¯nm for CdSe/CdTe device (CdSe film deposited at 250â¯Â°C) compared to CdS/CdTe device while in the range of 510-830â¯nm, QE of CdSe/CdTe device was lower than that of CdS/CdTe device indicating an inferior junction between CdSe and CdTe. The results also suggest that CdSe deposition temperature influences the film structure and further to the interfusion between CdSe and CdTe which has a significant effect on device performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 83, 15 August 2018, Pages 89-95
Journal: Materials Science in Semiconductor Processing - Volume 83, 15 August 2018, Pages 89-95
نویسندگان
Chunxiu Li, Fogen Wang, Yunlu Chen, Lili Wu, Jingquan Zhang, Wei Li, Xu He, Bing Li, Lianghuan Feng,