CuInS2 thin films obtained through an innovative CSVT deposition method from solvothermal-generated precursors

Copper indium disulfide (CuInS2) nanoparticles with sizes 20 ± 5 nm were synthesized by solvothermal techniques. Subsequently these were deposited for the first time on glass via a close-spaced vapor transport technique (CSVT) using iodine as transport agent. Optimization of the temperature and time was carried out during the deposition process. The surface properties were investigated in details by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-vis-NIR and Raman spectrophotometer, energy dispersive spectroscopy and electron diffraction (EDS). The CuInS2 films presented polycrystalline morphology, preferentially oriented along the (112) crystallographic plane and have band-gap values between 1.44 and 1.60 eV. The development of these films is relevant for photovoltaic applications.