کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117684 | 1461366 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure, optical and electrical properties of (Cu1-xAgx)2ZnSn(S,Se)4 alloy thin films for photovoltaic application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We fabricated the (Cu1-xAgx)2ZnSn(S,Se)4 (CAZTSSe) (0â¯â¤â¯xâ¯â¤â¯0.25) alloy thin films by a simple solution approach combined with a post-selenization technique, and investigated the influence of Ag contents on structure, morphology, band gap as well as electrical property of CZTSSe thin films. The results showed that Cu+ cation in Cu2ZnSn(S,Se)4 (CZTSSe) films was replaced by Ag+ cation, forming homogeneous CAZTSSe (0â¯â¤â¯xâ¯â¤â¯0.25) alloy thin films. The crystal structure and the band gap of CAZTSSe (0â¯â¤â¯xâ¯â¤â¯0.25) alloy thin films are influenced by Ag/(Cu+Ag) ratios. The incorporation of Ag is found to accelerate the grain growth and increase the grain size. The optical band gap of CAZTSSe alloy thin films can be continuously tuned in the range of as Ag content from xâ¯=â¯0 to xâ¯=â¯0.15. Furthermore, Hall measurement results indicate that all CAZTSSe alloy thin films showed p-type conductivity and hole concentration decreased with the increasing the Ag contents.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 81, July 2018, Pages 54-59
Journal: Materials Science in Semiconductor Processing - Volume 81, July 2018, Pages 54-59
نویسندگان
Yuhong Jiang, Bin Yao, Yongfeng Li, Zhanhui Ding, Hongmei Luan, Jinhuan Jia, Yan Li, Kun Shi, Yingrui Sui, Bingye Zhang,