کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117721 | 1461366 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Permittivity of Ge, Te and Se thin films in the 200-1500â¯nm spectral range. Predicting the segregation effects in silver
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Optical properties of well-known bulk materials can be significantly modified by decreasing dimensions to nm-size. Using Molecular Beam Epitaxy (MBE) and e-beam Physical Vapour Deposition (PVD) we have fabricated 20-30â¯nm-thick amorphous Ge, Te and Se films. The permittivities of investigated layers have been extracted from measurements of the Ψ and Î ellipsometric azimuths. We found that for all of the investigated films, the intensity of all bands in the permittivity spectrum is smaller than for bulk materials or thick (>â¯100â¯nm) films. Using the acquired optical constants along with the permittivity of a 20â¯nm-thick silver film, we have applied the Maxwell-Garnett equation to predict the permittivities of a silver film with Ge, Se or Te segregated in its structure. Implementing the parameters of 20â¯nm-thick Ge results in an 81â¯nm redshift of the segregation-induced band with respect to the experimental value, while implementing the parameters of 2â¯nm-thick Ge film results in a 95â¯nm blueshift of this band.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 81, July 2018, Pages 64-67
Journal: Materials Science in Semiconductor Processing - Volume 81, July 2018, Pages 64-67
نویسندگان
Arkadiusz Ciesielski, Lukasz Skowronski, Wojciech Pacuski, Tomasz Szoplik,