کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7117746 1461367 2018 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence study of deep donor- deep acceptor pairs in Cu2ZnSnS4
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Photoluminescence study of deep donor- deep acceptor pairs in Cu2ZnSnS4
چکیده انگلیسی
We present photoluminescence (PL) studies of high quality Cu2ZnSnS4 single crystals and thin films. At T = 10 K two PL bands (D1 and D2) were detected in both samples at about 1.35 eV and 1.27 eV. The temperature and laser power dependencies indicate that the properties of PL bands can be explained by deep donor-deep acceptor pair model, where the D1 and D2 bands result from a recombination between pairs of the closest neighbors, and between pairs of the next-closest neighbors, respectively. The donor defect in these pairs is suggested to be an interstitial Zn atom and located in either of the two possible interstitial positions. The most probable deep acceptor defect in this pair is CuZn.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 80, 15 June 2018, Pages 52-55
نویسندگان
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