کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117763 | 1461367 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study on thermoluminescence of TlInS2 layered crystals doped with Pr
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Praseodymium (Pr) doped TlInS2 crystals were studied by means of thermoluminescence (TL) measurements performed below room temperature with various heating rates. Detected TL signal exhibited glow curve consisting in overlapping two TL peaks at temperatures of 35â¯K (peak A) and 48â¯K (peak B) for 0.6â¯K/s heating rate. TL curve was analyzed with curve fitting and initial rise methods. Both of the applied methods resulted in consistent activation energies of 19 and 45â¯meV. The revealed trap levels were found to be dominated by mixed order of kinetics. Various heating rate dependencies of TL glow curves were also investigated and it was found that while peak A shows usual behavior, peak B exhibits anomalous heating rate behavior. Distribution of trap levels was explored using an experimental method called as TmaxâTstop method. Quasi-continuous distributions with increasing activation energies from 19 to 29â¯meV (peak A) and from 45 to 53â¯meV (peak B) were ascribed to trap levels. Effect of Pr doping on the TL response of undoped TlInS2 crystals was discussed in the paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 80, 15 June 2018, Pages 99-103
Journal: Materials Science in Semiconductor Processing - Volume 80, 15 June 2018, Pages 99-103
نویسندگان
S. Delice, M. Isik, N.M. Gasanly,