Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

The structural changes observed near the metal/AlGaN interface can be responsible for this electrical modification deduced by TLM analyses. As a matter of fact, two-dimensional TCAD simulation confirmed that the sheet resistance under the contact and the two-dimensional current distribution are affected by the electrical properties of the alloyed metal/semiconductor interface.