کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117927 | 1461369 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Recent advances in diamond power semiconductor devices
ترجمه فارسی عنوان
پیشرفت های اخیر در دستگاه های نیمه هادی قدرت الماس
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
چکیده انگلیسی
Diamond is known as an ultimate material because of its superior properties and it is expected to be employed in next-generation power electronic devices. Progress in epitaxial growth and fabrication techniques such as p- and n-type doping control with low compensation and surface treatment have improved the performance of power devices. High forward-current density and long-term stability have been achieved for Schottky barrier diodes operating at 400 °C. Fast turn-off operation with low loss and a high blocking capability of > 10 kV have also been realized. In addition, high blocking voltages of more than 2 kV have been achieved for switching devices such as metal-semiconductor field-effect transistors (MESFETs) and metal-oxide semiconductor FETs. To maximize device performance up to the material limit requires the development of fabrication techniques such as selective area doping, lithography, etching, formation of diamond/oxide interfaces and also defect reduction. Here, the current status of semiconductor diamond technology is reviewed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 78, May 2018, Pages 147-156
Journal: Materials Science in Semiconductor Processing - Volume 78, May 2018, Pages 147-156
نویسندگان
Hitoshi Umezawa,