کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118035 | 1461372 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural analysis of polycrystalline silicon thin films produced by two different ICPCVD approaches
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The structural properties of polycrystalline Si (poly-Si) thin films formed by using ICPCVD and LIA-ICPCVD methods under different H dilution ratios were investigated. Columnar-structured poly-Si films with 82% crystalline volume fraction were obtained by ICPCVD at a lower H dilution ratio of 50%. In the case of LIA-ICPCVD, to obtain nearly the same crystalline volume fraction (80%), a higher H dilution ratio (98%) was required and the poly-Si films obtained were mostly of cone-shaped columnar structure. The reverse effect is due to the difference in the antenna design in these systems, which changes the plasma characteristics. Multilayer deposition process, and subsequent H treatment and annealing were used in ICPCVD for producing highly crystallized poly-Si thin films from microcrystalline Si films. In the case of LIA-ICPCVD, annealing the ITO coated glass substrate in the deposition chamber prior to Si:H film deposition together with the optimization of process pressure yielded highly crystalline poly-Si film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 75, 1 March 2018, Pages 51-57
Journal: Materials Science in Semiconductor Processing - Volume 75, 1 March 2018, Pages 51-57
نویسندگان
Zhongli Li, Ayra Jagadhamma Letha, Jia-Fu Wei, Man-Ling Lu, Yijian Liu, Huey-Liang Hwang, Yafei Zhang,