کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118064 | 1461372 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires](/preview/png/7118064.png)
چکیده انگلیسی
The p-type Si nanowires were synthesized via deep reactive ion etching (DRIE). Al-doped ZnO films were coated on a p-Si nanowires substrate using the sol-gel method. Al-doped ZnO/p-Si NWs were characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the dark and under illumination at room temperature. Electrical parameters such as series resistance (Rs), ideality factor (n), barrier height (ΦB) and doping concentration atoms (NA) were investigated using the electrical measurements values at room temperature. Overall, I-V and C-V plots of the NWs were close to what was predicted and had excellent performance. The fabricated Al-doped ZnO/p-Si nanowires are more sensitive to light and frequency, so they are a promising candidate to be used as photovoltaic devices and photo-capacitors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 75, 1 March 2018, Pages 124-129
Journal: Materials Science in Semiconductor Processing - Volume 75, 1 March 2018, Pages 124-129
نویسندگان
Ahmet Kaya, K. Gurkan Polat, Ahmed S. Mayet, Howard Mao, Åemsettin Altındal, M. Saif Islam,