کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118244 | 1461373 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering](/preview/png/7118244.png)
چکیده انگلیسی
The authors report the sputtering-based syntheses of five amorphous indium titanium zinc oxide (InTiZnO) UV sensing devices with Ni/Au electrodes. To investigate their UV photodetection performance, the devices were subjected to current-voltage (I-V) characteristic measurements in the dark and under visible light and UV illumination. The oxygen flow ratio played a critical role in the sensing performance of the devices. That is, incorporation of oxygen during RF sputtering may influence the number of oxygen-related defects in the films. All devices exhibited transmittances of over 80% in the visible light region. With an applied bias of 10Â V and 290Â nm illumination, sample B exhibited a photo-to-dark current ratio of over 104, a UV-to-visible rejection ratio of over 103, and a photoresponsivity of 0.17Â A/W.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 74, February 2018, Pages 297-302
Journal: Materials Science in Semiconductor Processing - Volume 74, February 2018, Pages 297-302
نویسندگان
Ming-Hung Hsu, Sheng-Po Chang, Shoou-Jinn Chang, Wei-Ting Wu, Jyun-Yi Li,