کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118505 | 1461396 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and semiconducting properties of Na2MnPO4F. Application to degradation of Rhodamine B under UV-light
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Na2MnPO4F is synthesized by hydrothermal route at 453Â K and the physical properties and photo-electrochemical characterizations are reported. The compound crystallizes in a monoclinic system (SG: P 21/n) with the lattice constants: a=13.7132Â Ã
, b=5.3461Â Ã
, c=13.7079Â Ã
, β=119.97°. The UV-visible spectroscopy shows an indirect optical transition at 2.68 eV; a further direct transition occurs at 3.70 eV, due to the charge transfer O2â: 2p â Mn2+: eg. The thermal variation of the electrical conductivity is characteristic of a semiconducting behavior with activation energy of 39 meV and an electron mobility (µ318 K=5.56Ã10â4 cm2 Vâ1 sâ1), thermally activated. The flat band potential (+0.47 VSCE) indicates that the valence band derives mainly from O2â: 2p orbital with a small admixture of Fâ character while the conduction band is made up of Mn2+: t2g orbital. The electrochemical impedance spectroscopy shows the contribution of both the bulk and grains boundaries. The photocatalytic performance of Na2MnPO4F for the degradation of Rhodamine B (RhB) is demonstrated on the basis of the energy diagram. 88% of the initial concentration is degraded under UV light and the oxidation follows a first order kinetic with a rate constant of 0.516 hâ1. Neither adsorption nor photolysis is observed. The photoactivity results from the electron transition from the hybridized band (O2â, Fâ) to the Mn2+: eg orbital, occurring in the UV region. The catalyst was subjected to three successive photocatalytic cycles, thus proving its long term stability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 51, 15 August 2016, Pages 1-7
Journal: Materials Science in Semiconductor Processing - Volume 51, 15 August 2016, Pages 1-7
نویسندگان
R. Bagtache, K. Abdmeziem, G. Rekhila, M. Trari,