کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118625 | 1461406 | 2015 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A review of recent advances in transparent p-type Cu2O-based thin film transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
One of the crucial challenges that face the wide-spread implementation of flexible and transparent electronics is the lack of high performance p-type semiconductor material. Cu2O in thin-film form is a potentially attractive material for such applications because of its native p-type semi-conductivity, transparency, abundant availability, non-toxic nature, and low production cost. This review summarizes recent research on using copper oxide Cu2O thin films to produce p-type transparent thin-film transistors (TFTs) and complementary metal-oxide-semiconductor (CMOS) devices. After a short introduction about the main advantages of Cu2O semiconductor material, different methods for depositing and growing Cu2O thin films are discussed. The hi-tech development, along with the associated obstacles, of the Cu2O-based thin-film transistors is reviewed, with special emphasis on those made of sputtered Cu2O films. Finally, the bilayer scheme as one of the most exciting and promising technique for both TFTs and CMOS devices will be considered.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 40, December 2015, Pages 241-252
Journal: Materials Science in Semiconductor Processing - Volume 40, December 2015, Pages 241-252
نویسندگان
H.A. Al-Jawhari,