Preparation of silicon nanomaterials by arc discharge

Silicon (Si) has been occupying the central stage of semiconductor industries for many years. Si nanomaterials (SiNMs) have attracted great attention of many scientists and engineers for more than two decades, because of their unique properties. This review summarizes the preparation of SiNMs by arc discharge and their characterizations by different techniques. By changing arc discharge conditions, such as compositions and geometries of cathode and/or anode, voltage and current, and atmosphere in the chamber, etc., different types of SiNMs, including Si nanoparticles, Si nanowires, Si nanotubes, Si nanosheets, and some other nanomaterials containing Si, can be prepared. The formation mechanisms of these SiNMs are introduced briefly. Recent developments of arc discharge method will strongly promote its role in the preparation of SiNMs.