کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118771 | 1461407 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Inserting an i-ZnO layer to increase the performance of p-Si/n-ZnO heterojunction photodetectors
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
By inserting an intrinsic-zinc oxide (i-ZnO) layer into conventional p-Si/n-ZnO (p-n) heterojunction photodetectors (HPDs), the structure of p-Si/i-ZnO/n-ZnO (p-i-n) was prepared. It is evident that the i-ZnO layer could effectively reduce leakage current by about three orders, which leads to rectification ratio increasing from 70 to 6.6Ã104 for p-n and p-i-n HPDs, respectively, at +2Â V bias-voltage. With bias-voltages, the responsivity of p-n HPDs shows less variation. In contrast, the p-i-n HPDs demonstrate a greatly increasing in ultraviolet (UV) response. Such a result causes the UV (350Â nm)-to-visible (550Â nm) rejection ratio is enhanced from 14.1 to 39.7 for p-n and p-i-n HPDs, respectively. The UV response of p-i-n HPDs is roughly proportional to bias-voltages, however the p-n HPDs has less responsivity dependence on bias-voltages. Related mechanisms are studied here.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 39, November 2015, Pages 132-135
Journal: Materials Science in Semiconductor Processing - Volume 39, November 2015, Pages 132-135
نویسندگان
J.D. Hwang, D.H. Wu, S.B. Hwang,