کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7119129 | 1461406 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Valence band anticrossing model for GaSb1âxBix and GaP1âxBix using k.p method
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Valence band anticrossing model for GaSb1âxBix and GaP1âxBix using k.p method Valence band anticrossing model for GaSb1âxBix and GaP1âxBix using k.p method](/preview/png/7119129.png)
چکیده انگلیسی
The reduction in band gap as well as the increase in spin-orbit splitting energy in GaSb1âxBix and GaP1âxBix are explained by the Valence Band Anticrossing (VBAC) model. This restructuring of the valence band is due to the interaction of the Bi related impurity levels with the extended states of the valence band of the host semiconductor. The band gap reduction in GaSb1âxBix and GaP1âxBix calculated using VBAC model are respectively 40.2Â meV and 206Â meV/at% Bi. A comparison of the theoretical and experimentally obtained values of band gap in GaSbBi shows good agreement. Valence band structure for GaPBi is obtained by the extrapolation of the parameters used for modeling of the GaSbBi system. The upward movement of the spin-orbit split-off E+ energy level in GaSbBi by 19.2Â meV/at% Bi is also responsible for the suppression of Auger recombination processes making it a potential candidate for near and mid-infrared optoelectronic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 40, December 2015, Pages 539-542
Journal: Materials Science in Semiconductor Processing - Volume 40, December 2015, Pages 539-542
نویسندگان
D.P. Samajdar, T.D. Das, S. Dhar,