کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7119144 | 1461406 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low temperature magnetoresistance of InSb whiskers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Transverse and longitudinal magnetoresistance in InSb whiskers with different impurity concentration (4.4Ã1016-7.16Ã1017)Â Ñmâ3 were studied at temperature range (4.2-77)Â K and in magnetic fields (0-14)Â T. Shubnikov-de Haas oscillations in magnetoresistance for n-type InSb whiskers with impurity concentration in the vicinity to the metal-insulator transition (MIT) at low temperature were revealed. Every peak of longitudinal and transverse magnetoresistance (MR) split as the doublet for concentration 3.26Ã1017Â Ñmâ3. The giant g-factor was defined, that rises from 46 to 60 with increasing of the magnetic field up to 14Â T. The oscillation period differs in the range (0.095-0.11)Â Tâ1 at various doping concentration in InSb whiskers. The effective mass of electrons mÑ=0.03m0 and Dingle temperature with range (3-12)Â K were found in InSb whiskers with impurity concentration in the vicinity to MIT. The observed giant magnetoresistance (increasing in order of magnitude in magnetic field induction 14Â T) was used to design the sensitive sensor of magnetic field induction operated at the range of cryogenic temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 40, December 2015, Pages 550-555
Journal: Materials Science in Semiconductor Processing - Volume 40, December 2015, Pages 550-555
نویسندگان
A. Druzhinin, I. Bolshakova, I. Ostrovskii, Yu. Khoverko, N. Liakh-Kaguy,