کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7119144 1461406 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low temperature magnetoresistance of InSb whiskers
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Low temperature magnetoresistance of InSb whiskers
چکیده انگلیسی
Transverse and longitudinal magnetoresistance in InSb whiskers with different impurity concentration (4.4×1016-7.16×1017) сm−3 were studied at temperature range (4.2-77) K and in magnetic fields (0-14) T. Shubnikov-de Haas oscillations in magnetoresistance for n-type InSb whiskers with impurity concentration in the vicinity to the metal-insulator transition (MIT) at low temperature were revealed. Every peak of longitudinal and transverse magnetoresistance (MR) split as the doublet for concentration 3.26×1017 сm−3. The giant g-factor was defined, that rises from 46 to 60 with increasing of the magnetic field up to 14 T. The oscillation period differs in the range (0.095-0.11) T−1 at various doping concentration in InSb whiskers. The effective mass of electrons mс=0.03m0 and Dingle temperature with range (3-12) K were found in InSb whiskers with impurity concentration in the vicinity to MIT. The observed giant magnetoresistance (increasing in order of magnitude in magnetic field induction 14 T) was used to design the sensitive sensor of magnetic field induction operated at the range of cryogenic temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 40, December 2015, Pages 550-555
نویسندگان
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