کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7119194 | 1461406 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis, growth and characterization of AgInSe2 single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Synthesis, growth and characterization of AgInSe2 single crystals Synthesis, growth and characterization of AgInSe2 single crystals](/preview/png/7119194.png)
چکیده انگلیسی
Single crystal of the ternary semi-conductor AgInSe2 has been grown by Bridgman technique. The AgInSe2 crystal crystallizes in the tetragonal chalcopyrite structure. Using melt temperature oscillation method polycrystalline charge was synthesized. The synthesized charge was subjected to powder X-ray diffraction analysis. Thermal property of AgInSe2 was analyzed using differential scanning calorimetry (DSC) technique. The melting and solidification temperature is 777 °C and 761 °C respectively. The synthesized polycrystalline charge was employed to grow AgInSe2 single crystals. The grown crystal was confirmed by single crystal X-ray diffraction. The crystal exhibits 60% transmission in the Infrared region. The stoichiometric composition of AgInSe2 was confirmed by Energy dispersive X-ray analysis (EDAX). The electrical properties of the crystal were studied by Hall Effect measurements and photoconductivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 40, December 2015, Pages 591-595
Journal: Materials Science in Semiconductor Processing - Volume 40, December 2015, Pages 591-595
نویسندگان
N. Karunagaran, P. Ramasamy,