Effect of fullerene doping on the electrical properties of P3HT/PCBM layers

Poly (3-hexylthiophene-2, 5-diyl) (P3HT) and its blend with Phenyl-C61-Butyric acid-Methyl-Ester (PCBM) and fullerene (C60) thin films were prepared and their electrical properties for memory applications were studied. Due to doping, a sharp decrease in the resistance for a P3HT:PCBM:C60 device was observed at around 70 °C which makes it useful for thermal switching applications. Addition of C60 to P3HT:PCBM blend gave a high value for RRESET/RSET in thermal switching. For bias switching, threshold voltage reduces to 1.4 V from 25 V with the addition of C60 to P3HT layer.