کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7119413 | 1461414 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of the mechanism of multi-channel discharge in semiconductor processing by WEDM
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This paper studies the discharge characteristics of metal and semiconductor processing by WEDM, proves single-channel discharge in metal EDM and finds multi-channel discharge phenomenon in semiconductor EDM. The mechanism has been analyzed in this paper. The main reason for multi-channel discharge is the existence of body resistor and contact barrier; thus, there still exists a high potential difference between the electrode wire and the surrounding area of discharge points after the dielectric breakdown, and this potential difference can form a second discharge. The effects of multi-channel discharge on the processing efficiency of semiconductor EDM are also studied. The energy of each discharge channel is roughly equal, and thus the multi-channel discharge at the same time can increase the energy utilization ratio of the pulsed power supply and improve the processing efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 32, April 2015, Pages 125-130
Journal: Materials Science in Semiconductor Processing - Volume 32, April 2015, Pages 125-130
نویسندگان
Hao-ran Chen, Zhi-dong Liu, Sai-juan Huang, Hui-jun Pan, Ming-bo Qiu,