Electrical characteristics of organic/inorganic Pt(II) complex/p-Si semiconductor contacts

We produced Pt(II) complexes using the bidentate ligand N-aminopyrimidine-2-thione (APTH). The optical transmission of thin Pt-APTH films was measured. The optical bandgap of the material was 2.58 eV. With the expectation that it might have semiconductor properties and that the Pt-APTH complex might exhibit rectifier behavior when brought into appropriate contact with a semiconductor, we fabricated Pt-APTH/p-Si contacts by direct addition of a solution of Pt-APTH to the front side of p-Si wafers. Forward bias current-voltage measurements revealed satisfactory rectifying behavior for the Pt-APTH/p-Si contacts, with a mean rectification ratio of 4.40×102 and a mean barrier height of 0.765 eV. Cheung and Norde functions were used to obtain and verify some electrical characteristics of the contacts. The results obtained from both methods are compared and discussed.