An organic-inorganic rectifying contact based on a ZnPc derivative

In addition I-V measurements of the Al/oc-ZnPc/p-Si/Al were repeated under light which had illumination intensity of 40-100 mW/cm2. It was observed that reverse bias current of the diode increased with the light intensity. Therefore, the structure showed photodiode characteristics and it can be used for electrical and optoelectronic applications.