کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7119627 | 1461418 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55 μm
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55 μm Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55 μm](/preview/png/7119627.png)
چکیده انگلیسی
Band structures of n-i doped lattice-matched GaNAsBi/GaAs quantum wells are studied theoretically using a self-consistent calculation (based on the envelop function formalism) combined with the 16-band anti-crossing model. Operating at 1.55 μm, these QWs can represent active zones of temperature-insensitive optoelectronic device applications intended for optical fiber communications. We have calculated physical parameters of the structures such as the confining potential profiles, the Fermi level, the subband energies and their corresponding wavefunctions as well as the oscillator strength of inter-band transitions, the subband occupations, and the confined electrons density distributions. Finally, the absorption coefficient spectra of GaNAsBi-based QWs are also computed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 28, December 2014, Pages 108-114
Journal: Materials Science in Semiconductor Processing - Volume 28, December 2014, Pages 108-114
نویسندگان
M.M. Habchi, C. Bilel, A. Ben Nasr, A. Rebey, B. El Jani,