CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

► S/D access regions for self-aligned implant-free InGaAs MOSFETs are investigated. ► A combination of in situ dopped raised InGaAs S/D with Nickel-InGaAs alloy is proposed to provide low access resistance. ► Contact regions are characterized by XPS, RHEED, AFM, SIMS, SEM and electrical measurements. ► Gate-first implant-free InGaAs MOSFETs are produced with this innovative contacting scheme.