AlGaN/GaN power amplifiers for ISM applications

► We present an RF amplifier suitable for operation at 13.56 MHz based on normally-on AlGaN/GaN HFETs on semi-insulating SiC. ► We report on the suitability for high voltage operation with a breakdown voltage higher than 420 V. ► An output power of 139 W is achieved in cw mode and 431 W in pulsed mode respectively. ► We examine the device ruggedness with a VSWR of 15:1 without any damage.