Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs

► Analog performance of triple-gate MuGFETs fabricated in 45° rotated SOI substrates. ► Influence of fin width and temperature ranging from 250 K to 400 K is studied. ► Larger carrier mobility increase with temperature for rotated MuGFETs. ► The output conductance is weakly affected by the substrate rotation. ► Rotated MuGFETs present similar voltage gain and higher unity-gain frequency.