FinFlash with buried storage ONO layer for flash memory application

► Advanced FinFETs are fabricated with buried storage ONO layer. ► FinFETs are studied for flash memory application with remote charge trapping. ► The Si3N4 buried layer can trap charges by applying a back-gate or drain bias. ► Analog, logic and multi-bit memory operations can be performed with the same cell. ► The separation of the storing and the sensing interfaces improves the reliability..