کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7151227 | 1462265 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
A new plasma induced damage mechanism on CMOS image sensor is analyzed. An increase of the mean pixel dark current is observed after the plasma etch of a cavity on the pixel area. The degradation increases non-linearly when the dielectric layers between the photodiode and the plasma become thinner. This can be explained by a photo generation phenomenon in the dielectric nitride layer, induced by the plasma UV, and assisted by the wafer surface charge. This mechanism leads to the creation of a positive fixed charge on the pixel surface, which can next deplete the top P layer of the pinned photodiode. The temperature dependence of the dark current again demonstrates that the degradation is mainly due to a diode surface generation effect. Process and pixel architecture optimization are finally proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volumes 65â66, NovemberâDecember 2011, Pages 51-56
Journal: Solid-State Electronics - Volumes 65â66, NovemberâDecember 2011, Pages 51-56
نویسندگان
J.P. Carrère, J.P. Oddou, S. Place, C. Richard, D. Benoit, C. Jenny, M. Gatefait, C. Aumont, A. Tournier, F. Roy,