کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7151227 1462265 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization
چکیده انگلیسی
A new plasma induced damage mechanism on CMOS image sensor is analyzed. An increase of the mean pixel dark current is observed after the plasma etch of a cavity on the pixel area. The degradation increases non-linearly when the dielectric layers between the photodiode and the plasma become thinner. This can be explained by a photo generation phenomenon in the dielectric nitride layer, induced by the plasma UV, and assisted by the wafer surface charge. This mechanism leads to the creation of a positive fixed charge on the pixel surface, which can next deplete the top P layer of the pinned photodiode. The temperature dependence of the dark current again demonstrates that the degradation is mainly due to a diode surface generation effect. Process and pixel architecture optimization are finally proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volumes 65–66, November–December 2011, Pages 51-56
نویسندگان
, , , , , , , , , ,