Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

► Hole and electron mobility behavior with downscaling of fin width is investigated in (100), (110) and (111)-oriented FinFETs. ► Our results demonstrate the suitability of a well-calibrated effective-mass model for the simulation of hole mobility. ► Simulation results suggest that n- and p-type FinFETs are resilient to strong mobility degradation down to fin width of 6 nm. ► Comparison with simulations indicates that experimental (111) FinFETs have high fin width uniformity along the channel. ► In terms of SRAM cell size and stability, the optimum device for FinFET SRAM is FinFET with (111)-oriented sidewalls.