Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

We have made the successful growth of Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition (RTCVD). In order to overcome the large lattice mismatch between Ge and Si, we used a two-step growth method. Our method shows the uniformity of the thickness and good quality Ge layer with a homogeneous distribution of tensile strain and a lower etch pit density (EPD) in order of 105 cm−2. The surface morphology is very smooth and the root mean square (RMS) of the surface roughness was 0.27 nm. The photocurrent spectra were dominated by the Ge layer related transition that corresponding to the transitions of the Si and Ge. The roll-off in photocurrent spectra beyond 1600 nm is expected due to the decreased absorption of Ge.