کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
726855 892653 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An etchant for delineation of flow pattern defects in heavily doped p-type silicon wafers
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
An etchant for delineation of flow pattern defects in heavily doped p-type silicon wafers
چکیده انگلیسی

Secco etchant is conventionally used for delineation of flow pattern defects (FPDs) in lightly-doped Czochralski (Cz) silicon wafers. However, the FPDs in heavily doped p-type silicon wafers cannot be well delineated by Secco etchant. Herein, an etchant based on the CrO3HFH2O system, with an optimized volume ratio of V(CrO3):V(HF)=2:3, where the concentration of CrO3 is 0.25–0.35 M, has been developed for delineation of FPDs with well-defined morphologies for the heavily boron (B)-doped p-type silicon wafers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 3, June 2013, Pages 893–898
نویسندگان
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