کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
726859 892653 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod
چکیده انگلیسی

The behavior of precipitates in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by annealing at a high temperature in an ambient N2 (70%)+O2 (30%) atmosphere. The number of precipitates detected by cross-sectional X-ray topography increased with increasing annealing time. Because preannealing accompanying silicon oxidation in an ambient Ar+O2 atmosphere prevented the precipitates formation, interstitial silicon is considered to eliminate the origin of precipitate.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 3, June 2013, Pages 923–927
نویسندگان
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