کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
726859 | 892653 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The behavior of precipitates in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by annealing at a high temperature in an ambient N2 (70%)+O2 (30%) atmosphere. The number of precipitates detected by cross-sectional X-ray topography increased with increasing annealing time. Because preannealing accompanying silicon oxidation in an ambient Ar+O2 atmosphere prevented the precipitates formation, interstitial silicon is considered to eliminate the origin of precipitate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 3, June 2013, Pages 923–927
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 3, June 2013, Pages 923–927
نویسندگان
Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, Yoshikazu Takahashi, Hitoshi Habuka,