کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
726941 | 892661 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of substrates on the structural properties of ZnO films deposited by rf magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Insulating films of silicon nitride (Si3N4) or aluminum oxide (Al2O3) were grown on dry-oxidized Si wafers, and then ZnO was deposited on the insulating films. The crystallographic properties of the films were studied by X-ray diffraction (XRD), and their surface morphologies were investigated by atomic force microscopy (AFM). A high-resolution micro-Raman spectrometer excited with a 514.5 nm argon laser was used to evaluate the quality of the ZnO films. Next, leakage currents flowing through the insulating films were measured. Finally, Auger electron spectroscopy (AES) was employed to track the diffusion of zinc atoms through the insulating films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 3, June 2012, Pages 240–243
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 3, June 2012, Pages 240–243
نویسندگان
Chun Nam Cha, Mu Hee Choi, Tae Young Ma,