کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
726966 1461430 2011 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Controllable silicon nano-grass formation using a hydrogenation assisted deep reactive ion etching
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Controllable silicon nano-grass formation using a hydrogenation assisted deep reactive ion etching
چکیده انگلیسی

Highly controllable silicon nano-grass formation is reported based on a hydrogen assisted reactive ion etching method in desirable shapes and locations. By controlling the etching parameters, one can achieve grass-free high aspect ratio vertical or three-dimensional structures on silicon substrates. On the other hand, one can program the etching procedure to arrive at grass-full surfaces and structures in pre-designed features and in desired places. The improved wetting properties of the grass-full surfaces have been investigated. In addition, the grass-full surface has been used to entrap kidney cells. Aspect ratios of the order of 40–50 and features of the size of 250 nm can be achieved.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 14, Issues 3–4, September–December 2011, Pages 199–206
نویسندگان
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