کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
726966 | 1461430 | 2011 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controllable silicon nano-grass formation using a hydrogenation assisted deep reactive ion etching
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Highly controllable silicon nano-grass formation is reported based on a hydrogen assisted reactive ion etching method in desirable shapes and locations. By controlling the etching parameters, one can achieve grass-free high aspect ratio vertical or three-dimensional structures on silicon substrates. On the other hand, one can program the etching procedure to arrive at grass-full surfaces and structures in pre-designed features and in desired places. The improved wetting properties of the grass-full surfaces have been investigated. In addition, the grass-full surface has been used to entrap kidney cells. Aspect ratios of the order of 40–50 and features of the size of 250 nm can be achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 14, Issues 3–4, September–December 2011, Pages 199–206
Journal: Materials Science in Semiconductor Processing - Volume 14, Issues 3–4, September–December 2011, Pages 199–206
نویسندگان
M. Mehran, Z. Sanaee, M. Abdolahad, S. Mohajerzadeh,