کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
726976 | 1461430 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of K–N on the structural and optical properties of K–N co-doped ZnO film
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
N-doped and K–N co-doped ZnO thin films were prepared by chemical bath deposition. The effects of dopants on the microstructure and the optical properties of ZnO thin films are studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), room-temperature photoluminescence and Raman spectroscopy. The results show that the replacement of K ion in ZnO film may lead to the expulsion of the N ion from the lattice of ZnO, which leads to a change of the PL intensity of ZnO films. This conclusion was also proved by the Raman spectra, in which a new peak, centered at 287 cm−1, emerged with the increase of K concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 14, Issues 3–4, September–December 2011, Pages 257–260
Journal: Materials Science in Semiconductor Processing - Volume 14, Issues 3–4, September–December 2011, Pages 257–260
نویسندگان
Yue Zhao, Mingtao Zhou, Zhiyong Lv, Zhao Li, Jian Huang, Xiaoyan Liang, Jiahua Min,