کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
726983 | 1461430 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of Si wells and pyramids on (1Â 0Â 0) surface as a result of Zn-Si interaction
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Interaction between metallic zinc and Si wafer at moderately high temperatures was found to generate either concave wells or hollow pyramid-shaped protrusions on the (1Â 0Â 0) wafer surface. The formation of the wells is attributed to the dissolution of silicon at temperatures much lower than its melting point in the form of Zn-Si eutectic. When the temperature was raised, Zn atoms in the eutectic droplets evaporated and Si atoms in them precipitated accordingly. If a droplet contained plenty of Si atoms, these Si atoms could encounter each other during precipitation at the surface of the droplet and condense into a hollow pyramid-shaped protrusion.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 14, Issues 3â4, SeptemberâDecember 2011, Pages 302-305
Journal: Materials Science in Semiconductor Processing - Volume 14, Issues 3â4, SeptemberâDecember 2011, Pages 302-305
نویسندگان
Yue Wu, Gengmin Zhang, Zhonghe Xi,