کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
727041 1461436 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of defect, carrier concentration and annealing process on the photoluminescence of silicon pn diodes
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Effects of defect, carrier concentration and annealing process on the photoluminescence of silicon pn diodes
چکیده انگلیسی

Silicon pn diodes were fabricated by ion implantation of B and P ions with different doses and subsequent annealing processes. Room temperature photoluminescence (PL) were investigated and the factors affecting the PL intensity were analyzed. Results show that both kinds of pn diodes have PL peak centered at about 1140 nm. Dislocation loops resulted from ion implantation and annealing process may enhance the light emission of silicon pn diode due to its band quantum confinement effect to carriers. The luminescence intensity depends on the carrier concentrations in the implantation region. It should be controlled at the range of 1–6×1016 cm−3. Moreover, the PL intensities of pn diodes with furnace annealing (FA) are higher than those with rapid thermal annealing, and the annealing temperature range for FA is 900–1100 °C.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 10, Issues 4–5, August–October 2007, Pages 173–178
نویسندگان
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