کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
727812 | 1461403 | 2016 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs Ultraviolet photoresponse of ZnO nanostructured AlGaN/GaN HEMTs](/preview/png/727812.png)
We present the first active visible blind ultraviolet (UV) photodetector based on zinc oxide (ZnO) nanostructured AlGaN/GaN high electron mobility transistors (HEMTs). The ZnO nanorods (NRs) are selectively grown on the gate area by using hydrothermal method. It is shown that ZnO nanorod (NR)-gated UV detectors exhibit much superior performance in terms of response speed and recovery time to those of seed-layer-gated detectors. It is also found that the best response speed (~10 and~190 ms) and responsivity (~1.1×105 A/W) were observed from detectors of the shortest gate length of 2 µm among our NR-gated devices of three different gate dimensions, and this responsivity is about one order higher than the best performance of ZnO NR-based UV detectors reported to date.
Journal: Materials Science in Semiconductor Processing - Volume 44, 15 March 2016, Pages 71–77