کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728005 1461393 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Stable resistive switching characteristics of Ce:HfOx film induced by annealing process
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Stable resistive switching characteristics of Ce:HfOx film induced by annealing process
چکیده انگلیسی

In this work, Ce:HfOx films were fabricated and the resistive switching characteristics were investigated. The chemical bonding states of the films were explored by X-ray photoelectron spectroscopy. The annealing process was carried out to modulate the concentration of oxygen vacancies in the film to confirm the dominant role of oxygen vacancies on resistive switching behaviors, which resulted in the elimination of unstable oxygen vacancies and the introduction of oxygen vacancy near Ce dopants due to the reduction of Ce4+. Benefiting from the oxygen vacancies near Ce dopants, stable resistive switching performance can be achieved for the annealed Ce:HfOx sample. A schematic diagram based on the formation and rupture of oxygen vacancy filaments was proposed to illustrate the switching behaviors of annealed Ce:HfOx sample.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 54, 1 November 2016, Pages 65–69
نویسندگان
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