Estimation of analog/RF figures-of-merit using device design engineering in gate stack double gate MOSFET

In this paper, the analog performance as well as some new RF figures of merit (FOMs) are reported for the first time of a gate stack double gate (GS-DG) metal oxide semiconductor field effect transistor (MOSFET) with various gates and channel engineering. The comparison is made through various performance metrics between single material (SM) GS-DG, dual material (DM) GS-DG, and dual material single halo (DM-SH) GS-DG MOSFETs. The key idea behind this investigation is to provide a physical explanation for the improved analog and RF performances exhibited by the device. The major figures of merit (FOMs) such as transconductance (gm), output conductance (gd), transconductance generation factor (TGF), early voltage (VEA), intrinsic gain (AV), cut off frequency (fT) are analyzed in this paper. The VEA and TGF for p-MOSFET with above technologies are also systematically investigated with the help of extensive device simulation, i.e. TCAD (Technology Computer Aided Design). The DM-DG devices are known to have significantly better performances as compared to SM counterparts. The analysis shows an opportunity for realizing high performance analog and RF circuits with the device proposed in this paper. The DM-DG configurations can be preferred over SM-DG as they show 48.53% improvement in fT, 25.54% in AV and more than 90% in VEA.