کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728178 1461405 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Numerical simulation of InGaN Schottky solar cell
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Numerical simulation of InGaN Schottky solar cell
چکیده انگلیسی

The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potentiality to allow achieving high efficiency solar cells through the tuning of its band gap by changing the Indium composition. It also counts among its advantages a relatively low effective mass, high carriers' mobility, a high absorption coefficient along with good radiation tolerance. However, the main drawback of InGaN is linked to its p-type doping, which is difficult to grow in good quality and on which ohmic contacts are difficult to realize. The Schottky solar cell is a good alternative to avoid the p-type doping of InGaN. In this report, a comprehensive numerical simulation, using mathematically rigorous optimization approach based on state-of-the-art optimization algorithms, is used to find the optimum geometrical and physical parameters that yield the best efficiency of a Schottky solar cell within the achievable device fabrication range. A 18.2% efficiency is predicted for this new InGaN solar cell design.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 41, January 2016, Pages 219–225
نویسندگان
, , ,