کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
728219 | 1461405 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and Raman studies of Ga2O3 obtained on GaAs substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Ga2O3 were synthesized by controlled thermal oxidation of GaAs substrates at atmospheric pressure. The crystalline structure and vibrational modes were studied as a function of growth temperature within a range of 750–950 °C. Samples grown in the range of 750–850 °C present nanostructured surface and the samples obtained at higher temperature are oriented to the (004) β-phase. Crystalline structure was confirmed by X-ray diffraction, and Raman scattering studies. The evolution of the surface morphology was analyzed by atomic force microscopy, and scanning electron microscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 41, January 2016, Pages 513–518
Journal: Materials Science in Semiconductor Processing - Volume 41, January 2016, Pages 513–518
نویسندگان
C. Galván, M. Galván, J.S. Arias-Cerón, E. López-Luna, H. Vilchis, V.M. Sánchez-R,