کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
728245 | 1461426 | 2014 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Storage moduli, loss moduli and damping factor of GaAs and Ga1−xMnxAs thin films using DMA 2980 Storage moduli, loss moduli and damping factor of GaAs and Ga1−xMnxAs thin films using DMA 2980](/preview/png/728245.png)
The spin injector part of spintronic FET and diodes suffers from fatigue due to rising heat on the depletion layer. In this study the stiffness of Ga1−xMnxAs spin injector in terms of storage modulus with respect to a varying temperature, 45 °C≤T≤70 °C was determined. It was observed that the storage modulus for MDLs (Manganese Doping Levels) of 0%, 1% and 10% decreased with increase in temperature while that with MDLs of 20% and 50% increase with increase in temperature. MDLs of 20% and 50% appear not to allow for damping but MDLs ≤20% allow damping at temperature range of 45 °C≤T≤70 °C. The magnitude of storage moduli of GaAs is smaller than that for ferromagnetic Ga1−xMnxAs systems. The loss moduli for GaAs were found to reduce with increase in temperature. Its magnitude of reducing gradient is smaller than Ga1−xMnxAs systems. The two temperature extremes show a general reduction in loss moduli for different MDLs at the study temperature range. From damping factor analysis, damping factors for ferromagnetic Ga1−xMnxAs was found to increase with decrease in MDLs contrary to GaAs which recorded the largest damping factor at 45 °C≤T≤70 °C. Hence, MDL of 20% shows little damping followed by 50% while MDL of 0% has the most damping in an increasing trend with temperature.
Journal: Materials Science in Semiconductor Processing - Volume 20, April 2014, Pages 23–26