کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728282 1461408 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors
چکیده انگلیسی

We report the fabrication of bottom-gate thin film transistors (TFTs) at various carrier concentrations of an amorphous InGaZnO (a-IGZO) active layer from ~1016 to ~1019 cm−3, which exceeds the limit of the concentration range for a conventional active layer in a TFT. Using the Schottky TFTs configuration yielded high TFT performance with saturation mobility (μsat), threshold voltage (VTH), and on off current ratio (ION/IOFF) of 16.1 cm2/V s, −1.22 V, and 1.3×108, respectively, at the highest carrier concentration active layer of 1019 cm−3. Other carrier concentrations (<1019 cm−3) of IGZO resulted in a decrease of its work function and increase in activation energy, which changes the source/drain (S/D) contact with the active layer behavior from Schottky to quasi Ohmic, resulting in achieving conventional TFT. Hence, we successfully manipulate the barrier height between the active layer and the S/D contact by changing the carrier concentration of the active layer. Since the performance of this Schottky type TFT yielded favorable results, it is feasible to explore other high carrier concentration ternary and quaternary materials as active layers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 38, October 2015, Pages 50–56
نویسندگان
, , , , ,